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INTEGRATED CIRCUITS
DATA SHEET
CGY2010G; CGY2011G GSM 4 W power amplifiers
Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
FEATURES * Power Amplifier (PA) overall efficiency 45% * 35.5 dB gain * 0 dBm input power * Gain control range >55 dB * Integrated power sensor driver * Low output noise floor of PA < -129 dBm/Hz in GSM RX band * Wide operating temperature range -20 to +85 C * LQFP 48 pin package * Compatible with power ramping controller PCA5075 * Compatible with GSM RF transceiver SA1620. APPLICATIONS * 880 to 915 MHz hand-held transceivers for E-GSM applications * 900 MHz TDMA systems. QUICK REFERENCE DATA SYMBOL VDD IDD Pout(max) Tamb Note 1. For conditions, see Chapters "AC characteristics" and "DC characteristics". ORDERING INFORMATION TYPE NUMBER CGY2010G CGY2011G PACKAGE NAME LQFP48 DESCRIPTION PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature
CGY2010G; CGY2011G
GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to operate at 4.8 V battery supply. These ICs also include a power sensor driver so that no directional coupler is required in the power control loop. Both ICs have the same performance but are issued from different wafer fabs. The PAs require only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. They can be switched off and their power controlled by monitoring the actual drain voltage applied to the amplifier stages.
MIN. - - - -20
TYP. 4.2 1.8 35.5 - - - -
MAX.
UNIT V A dBm
C
+85
VERSION SOT313-2
plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
1996 Jul 08
2
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
BLOCK DIAGRAM
CGY2010G; CGY2011G
handbook, full pagewidth
VDD1 29
VDD2 33
VDD3 42 18 SENSOR DRIVER
DETO/VDD5
RFI
27
6,7.8
RFO/VDD4
(1)
CGY2010G CGY2011G
31 19
MGB761
GND VGG1 VGG2
(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
Fig.1 Block diagram.
PINNING SYMBOL GND RFO/VDD4 GND DETO/VDD5 VGG2 GND RFI GND VDD1 GND VGG1 GND VDD2 GND VDD3 GND 1996 Jul 08 PIN 1 to 5 6 to 8 9 to 17 18 19 20 to 26 27 28 29 30 31 32 33 34 to 41 42 43 to 48 ground power amplifier output and fourth stage supply voltage ground power sensor output and supply voltage fourth stage negative gate supply voltage ground power amplifier input ground first stage supply voltage ground first three stages negative gate supply voltage ground second stage supply voltage ground third stage supply voltage ground 3 DESCRIPTION
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
46 GND
38 GND
41 GND
45 GND
40 GND
39 GND
48 GND
37 GND
44 GND
43 GND
47 GND
handbook, full pagewidth
42 VDD3
GND GND GND GND GND RFO/VDD4 RFO/VDD4 RFO/VDD4 GND
1 2 3 4 5 6 7 8 9
36 GND 35 GND 34 GND 33 VDD2 32 GND
CGY2010G CGY2011G
31 VGG1 30 GND 29 VDD1 28 GND 27 RFI 26 GND 25 GND
GND 10 GND 11 GND 12
GND 21
DETO/VDD5 18
VGG2 19
GND 22
GND 13
GND 14
GND 15
GND 16
GND 17
GND 20
GND 23
GND
24
MGB760
Fig.2 Pin configuration.
1996 Jul 08
4
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
FUNCTIONAL DESCRIPTION Operating conditions The CGY2010G and CGY2011G are designed to meet the European Telecommunications Standards Institute (ETSI) GSM documents, the "ETS 300 577 specification", which are defined as follows: * ton = 542.8 s * T = 4.3 ms * Duty cycle = 1/8 The devices are specifically designed for pulse operation allowing the use of a LQFP48 plastic package. Power amplifier The power amplifier consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply.
CGY2010G; CGY2011G
The amplifier bias is set by means of a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress for the amplifier. Power sensor driver The power sensor driver is a buffer amplifier that delivers a signal to the DETO output pin which is proportional to the amplifier power. This signal can be detected by external diodes for power control purpose. As the sensor signal is taken from the input of the last stage of the PA, it is isolated from disturbances at the output by the reverse isolation of the PA output stage. Impedance mismatch at the PA output therefore, does not significantly influence the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. Consequently the cost and space of using a directional coupler are saved.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL VDD VGG Tj(max) Tstg Ptot positive supply voltage negative supply voltage maximum operating junction temperature IC storage temperature total power dissipation PARAMETER - - - - - MIN. 7 -10 150 150 1.5 MAX. V V C C W UNIT
THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c Note 1. This thermal resistance is measured under GSM pulse conditions. PARAMETER thermal resistance from junction to case; note 1 VALUE 32 UNIT K/W
1996 Jul 08
5
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
DC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 C; general operating conditions applied; peak current values during burst; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD IDD positive supply voltage positive peak supply current 0 - - - - 4.2 1.8 -2 -2 2.5 5.5 2.2 - - 5 V A
Pins VGG1 and VGG2 VGG1 VGG2 IGG1 + IGG2 Note 1. The negative bias VGG1 and VGG2 must be applied 10 s before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. negative supply voltage negative supply voltage negative peak supply current note 1 note 1 V V mA
1996 Jul 08
6
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
AC CHARACTERISTICS
CGY2010G; CGY2011G
VDD = 4.5 V; Tamb = 25 C; general operating conditions applied; unless otherwise specified. SYMBOL Power amplifier Pin S11 fRF Pout(max) Pout(min) NRX input power input return loss RF frequency range maximum output power efficiency minimum output power output noise in RX band Tamb = 25 C; VDD = 4.5 V Tamb = -20 to +85 C; VDD = 4.2 V VDD = 4.2 V VDD < 0.1 V fRF = 925 MHz at Pout(max) fRF = 935 MHz at Pout(max) fRF = 960 MHz at Pout(max) H2 H3 Stab 2nd harmonic level 3rd harmonic level stability note 2 RL = 100 ; relative to PA output power into 50 load load VSWR < 6 : 1 at PA output note 1; 50 source -1.5 - 880 34.5 32.5 - - - - - - - - - - - - - 35.5 - 45 - - - - -33 -40 - -23 - +1.5 -6 915 - - - -20 -117 -129 -129 -30 -37 -70 - 2 dBm dB MHz dBm dBm % dBm dBm/Hz dBm/Hz dBm/Hz dBc dBc dBc PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Power sensor driver Pout(DET) Pout(DET) Notes 1. Including the 100 resistor connected in parallel at the power amplifier input on the evaluation board. 2. The device is adjusted to provide nominal value of load power into a 50 load. The device is switched off and a 6 : 1 load replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 second period. sensor driver output power driver output power variation dBc dB
1996 Jul 08
7
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
APPLICATION INFORMATION
CGY2010G; CGY2011G
handbook, full pagewidth
10 pF 1 2 3 4 5 PA output 8 (1) 33 pF
(1)
48 47 46 45 44 43 42 41 40 39 38 37 VDD3
36 35 34
TRL2
(3)
27 pF 47 39 pF 1 nF TRL1 (2)
1 nF
VDD2
33 32 31 30 29 28 27 26 25 10 nH 100 Zc = 50 1.5 pF -2 V
10 (1) pF
pF
6 7 8 9 10 11 12 RFO/VDD4
CGY2010G CGY2011G
VGG1 VDD1 RFI
100 pF X7R PA input
TRL3
(4)
DETO VGG2 13 14 15 16 17 18 19 20 21 22 23 24
100 pF 10 pF 10 nF 22 nH
100
39 100
100 pF 1 k
MGB764
-90 A
Vcontrol 0.8 to 3 V
BSR14
PMOS Ron < 0.1 560
PHP109 Vdiode BAS70 Vbat +4.8 V
BAS70
1 k DC output
1 nF
39 pF
1.25 V
(1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603. (2) TRL1: width: 0.3 mm; length: 16 mm. (3) TRL2: width: 0.3 mm; length: 6.3 mm. (4) TRL3: width: 0.3 mm; length: 20 mm.
Fig.3 Evaluation board schematic (FR4, 0.8 mm).
1996 Jul 08
8
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
PACKAGE OUTLINE
CGY2010G; CGY2011G
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
c
y X
36 37
25 24 ZE
A
e
Q E HE A A2 A1 (A 3) Lp L detail X
wM pin 1 index 48 1 12 ZD bp D HD wM B vM B vM A 13 bp
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT313-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.5 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 Q 0.69 0.59 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
ISSUE DATE 93-06-15 94-12-19
1996 Jul 08
9
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
CGY2010G; CGY2011G
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Jul 08
10
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
CGY2010G; CGY2011G
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jul 08
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com/ps/ (1) CGY2010G_2011G_2 June 26, 1996 11:51 am SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands
647021/1200/02/pp12 Date of release: 1996 Jul 08 Document order number: 9397 750 00955

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